STRUCTURAL AND OPTICAL PROPERTIES OF SnS2 NANOSHEETS FOR OPTO- ELECTRIC DEVICES

Abstract

Tin disulfide (SnS2) is a promising material for applications in hydroelectric cells, photovoltaics, photodetectors, and energy storage owing to its layered structure, excellent optical properties, electrical and high chemical stability. In this study, SnS2 nanosheets were fabricated using the sol-gel technique, a method known for its efficiency in producing high-purity nanostructures on a large scale at a reasonable cost. To produce the final SnS2 nanosheets, a precursor solution consisting of Sn and sulfur sources were prepared. This was followed by careful hydrolysis of Tin (IV) chloride pentahydrate with thiourea, forming a gel, which was dried and annealed to obtain crystalline SnS2 nanosheets. X-ray diffraction (XRD), Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), UV- Vis spectroscopy, and Photoluminescence spectroscopy (PL) were used to investigate the structural, morphological, chemical bonds, optical and electrical characteristics of the produced SnS2. While TEM showed a layered and distinct nanostructure, the XRD investigation verified the production of a pure hexagonal SnS2 phase. UV-Vis spectroscopy estimates a band gap of 2.37 eV. PL spectra showed a prominent emission peak at 699 nm, suggesting a direct bandgap transition suitable for optoelectronic devices. The chromaticity diagram was created using PL data indicate the blue color emitted by the light source which can be used in electro-optical devices. FTIR analysis of sol-gel-synthesized SnS2 confirmed the presence of Sn-S bonds, indicating successful compound formation. According to these estimations, the optical band gap falls within the range appropriate for optoelectronic applications. The results show that the sol-gel process is a productive way to create high-quality SnS2 with adjustable characteristics, making it a good option for next-generation energy harvesting and electronic devices.