JUNCTION LESS ACCUMULATION MODE SURROUNDING GATE (JAM-SG) HYDROGEN GAS DETECTOR

Abstract

In this report, analysis of Junctionless Accumulation Mode Surrounding gate (JAM-SG) as a hydrogen gas detector has been done. JAM-SG with metal gate for gas sensing applications is proposed for the first time in this paper. A simulated model is developed for n-channel JAM-SG to observe the different electrical parameters of the device for different values of pressure [1]. Different simulated results such as surface potential, electric field and electron velocity have been analyzed at two different values of pressure10- 14(Torr) and 10-13(Torr). At pressure10- 14(Torr) work function of 5.0eV gets generated at metallic gate, maximum output drain current of 15.59μA at VDS=1V, the maximum output conductance of 145(μ A/V) at VDS=0V and maximum transconductance of 7.7(μA/V) at VGS=0.8V is obtained, while at pressure of 10- 13(Torr),work function of 5.2eV gets generated at metallic gate, maximum output drain current of 5.31μA at VDS=1V, the maximum output conductance of 61.2(μA/V) at VDS=0V, and the maximum transconductance of 8.45(μA/V) at VGS=1V is achieved.