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Title: | JUNCTION LESS ACCUMULATION MODE SURROUNDING GATE (JAM-SG) HYDROGEN GAS DETECTOR |
Authors: | YADAV, SHIV SHANKAR |
Keywords: | JAM-SG MOSFET HYDROGEN GAS DETECTOR |
Issue Date: | Jun-2024 |
Series/Report no.: | TD-8211; |
Abstract: | In this report, analysis of Junctionless Accumulation Mode Surrounding gate (JAM-SG) as a hydrogen gas detector has been done. JAM-SG with metal gate for gas sensing applications is proposed for the first time in this paper. A simulated model is developed for n-channel JAM-SG to observe the different electrical parameters of the device for different values of pressure [1]. Different simulated results such as surface potential, electric field and electron velocity have been analyzed at two different values of pressure10- 14(Torr) and 10-13(Torr). At pressure10- 14(Torr) work function of 5.0eV gets generated at metallic gate, maximum output drain current of 15.59μA at VDS=1V, the maximum output conductance of 145(μ A/V) at VDS=0V and maximum transconductance of 7.7(μA/V) at VGS=0.8V is obtained, while at pressure of 10- 13(Torr),work function of 5.2eV gets generated at metallic gate, maximum output drain current of 5.31μA at VDS=1V, the maximum output conductance of 61.2(μA/V) at VDS=0V, and the maximum transconductance of 8.45(μA/V) at VGS=1V is achieved. |
URI: | http://dspace.dtu.ac.in:8080/jspui/handle/repository/22186 |
Appears in Collections: | M.E./M.Tech. Electronics & Communication Engineering |
Files in This Item:
File | Description | Size | Format | |
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Shiv Shankar Yadav M.Tech.pdf | 2.48 MB | Adobe PDF | View/Open |
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