PERFORMANCE EVALUATION OF LOW POWER SRAM CELL

Abstract

This study undertakes a comprehensive assessment of the performance of two pivotal static random access memory configurations: the traditional 6T and innovative 7T SRAM cells. Key parameters, encompassing read and write access times, power consumption, leakage current, area efficiency, stability, noise margins, process variability sensitivity, temperature and voltage sensitivity, technology node compatibility, dynamic power dissipation, and reliability, undergo a systematic analysis. The research strives to offer profound insights into the merits and demerits of each configuration. This knowledge is intended to empower designers and engineers, facilitating well-informed decisions tailored to specific application requirements. The outcomes of this investigation contribute significantly to the ongoing dialogue surrounding the optimization of SRAM design. Ultimately, the research aims to advance the efficiency and reliability of SRAM in a diverse range of semiconductor applications, fostering progress in memory technology and design.