PERFORMANCE ANALYSIS OF MULTI-GATE FERROELECTRIC FET

Abstract

This report presents an extensive analysis of Multi gate Ferroelectric Field-Effect Transistors (FETs) and their applications in high-frequency electronic devices. The report delves into the fundamental characteristics, working principles, design considerations, challenges, and potential future directions of high frequency ferroelectric FETs. It also discusses various aspects such as material selection, fabrication techniques, integration, and provides an in-depth overview of their applications in high-frequency communication systems, radar technology, and data transmission. Using simulations using the TCAD Silvaco ATLAS simulator and the ferro model, fermi, Lombardi CVT model, Shockley-Read-Hall (SRH) recombination models, a Dual Gate Accumulation Mode Without Junction It has been suggested to use a ferroelectric Field Effect Transistor (JAM-DG-FE-FET). and evaluated for RF/analog specifications. When comparing the JAM-DG-FE-FET configuration to the Junctionless Accumulation Mode Ferroelectric Field Effect Transistor (JAM-FE-FET) setup, key analog metrics such as gm, Av, gd, and early voltage (VEA) are obtained. Subsequently, the suggested apparatus undergoes frequency examination, and several crucial radiofrequency characteristics, such as fT is noted about the Dual Gate Junctionless Accumulation Mode Ferroelectric Field Effect Transistor (JAM-DG-FE FET). Therefore, when compared to Junctionless Accumulation Mode ferroelectric FETs (JAM-FE-FET), Dual Gate Junctionless Accumulation Mode ferroelectric FETs (JAM-DG-FE-FET) have been discovered to have improved analogue and RF performance. Therefore, it can be said that the JAM-DG-FE-FET device that is being shown here is a strong candidate for use in high-frequency systems.