MODIFICATIONS IN INORGANIC OXIDES FOR THE APPLICATION IN ELECTRONIC DEVICES WITH SEMICONDUCTORS

Abstract

This dissertation examines the alterations made to inorganic oxides in order to improve their usability in electronic devices that include semiconductors. Inorganic oxides, renowned for their distinctive electrical, optical, and thermal characteristics, play a vital role in the advancement of semiconductor technology. Nevertheless, the performance of these systems may be constrained by intrinsic material characteristics. This study investigates many methods, like as doping, nanostructuring, and surface treatments, to enhance the performance of these oxides for electronic purposes. The thesis conducts a thorough analysis of current literature and experimental experiments to identify crucial techniques for enhancing the conductivity, stability, and integration compatibility of inorganic oxides. More precisely, ZnO nanoparticles that were pure and doped with Fe were synthesized using a cost-effective co-precipitation technique. The optical characteristics of the materials were investigated using UV-Vis absorption spectroscopy. The results showed that pure ZnO had a band gap of 3.420 eV. For ZnO with 2%, 5%, and 10% Fe doping, the band gaps were measured to be 3.23 eV, 3.57 eV, and 3.07 eV, respectively. An increase in doping concentration resulted in a shift of the measured wavelength from 373 nm to 368 nm, known as a blue shift. The work demonstrates that the optical and electrical characteristics of Fe ZnO nanoparticles are contingent upon the sizes of the particles, as determined by analyzing zeta potential and particle size data.