IMPACT OF VARIATION IN HIGH-K DIELECTRIC ON ANALOG AND SWITCHING PERFORMANCE OF JL-GAA-SiNW FET

Abstract

This research paper aims to investigate the impact of changing the dielectric material in the gate stack on the analogue performance of gate-all-around silicon nanowire field-effect transistors (GAA-SiNWFETs). GAA-SiNWFETs have garnered significant attention in the field of nanoelectronics due to their smaller size, high performance, and low power consumption, making them suitable for various future applications, including biosensors. To conduct a comprehensive analysis, TCAD simulations using the ATLAS-3D device simulator are employed in this study. The simulations are performed at a low drain bias voltage of 0.1V, and Niobium is chosen as the gate electrode material, with a specific work-function value of 4.8eV. By focusing on the analogue parameters such as Id-Vg characteristics, transconductance (Gm), subthreshold swing, device efficiency, switching ratio, and leakage current, the research aims to understand the influence of different dielectric materials, namely SiO2, Al2O3, and HfO2, on the analogue performance of GAA-SiNWFETs. The findings of this study reveal that the choice of dielectric material significantly affects the analogue performance of GAA SiNWFETs. The Id-Vg characteristics, which represent the drain current as a function of the gate voltage, exhibit variations depending on the dielectric material used in the gate stack. The transconductance, a measure of the device's ability to amplify signals, and the subthreshold swing, which indicates the efficiency of the device in switching between on and off states, are also influenced by the dielectric material. Furthermore, the device efficiency, switching ratio, and leakage current exhibit noticeable changes based on the dielectric material employed. To prevent electron tunnelling and ensure proper device operation, the GAA-SiNWFETs utilize an interface oxide (SiO2) in conjunction with a varied dielectric oxide at the gate. This combination aims to optimize the device performance by maintaining an appropriate balance between electron flow and gate control. The knowledge gained from this research can have significant implications for the development of high-performance analogue circuits in various applications, particularly in the fields of sensor technologies and low-power electronics. Understanding how different dielectric materials affect the analogue performance of GAA SiNWFETs is crucial for researchers and engineers involved in the design and optimization of iii nanoelectronics devices. By considering the specific requirements and performance trade-offs associated with different dielectric materials, it becomes possible to make informed decisions and achieve improved device functionality, reliability, and energy efficiency. The insights gained from this study contribute to the advancement of emerging technologies, fostering the realization of high-performance analogue circuits that can revolutionize diverse fields of application.