TCAD SIMULATION BASED ANALYSIS OF TFET BASED ON DIFFERENT STRUCTURAL SHAPE: F-SHAPED AND Z-SHAPED

Abstract

This work provides a thorough investigation of Z-shaped and F-shaped tunnel field effect transistors (TFETs), emphasizing the unique structural characteristics and improved performance of these devices. With a architecture shaped like the letter "F," the F-shaped TFET provides better electrostatic control over the channel, improving tunnelling efficiency and raising on-current while preserving a competitive subthreshold swing. On the other hand, the Z-shaped TFET exhibits better control over the tunnelling junction due to its Z-like gate design, which lowers the subthreshold slope and lessens the impact of short channels. These sophisticated geometries are intended to overcome the drawbacks of traditional TFETs, including significant off-state leakage and inadequate on-current, thus positioning them as viable options for low-power and high-performance applications. It is anticipated that forthcoming developments will centre on enhancing material attributes, perfecting manufacturing methods, and investigating new device structures in order to augment the efficiency and expandability of these inventive TFET configurations. The findings of this study highlight the potential of Z-shaped and F-shaped TFETs in developing semiconductor technology and satisfying the needs of electronic gadgets of the future. Additionally, integrate these designs with newly developed materials and nanoscale manufacturing techniques.