IMPACT OF VARIATION IN HIGH-K DIELECTRIC ON ANALOG AND SWITCHING PERFORMANCE OF JL-GAA-SiNWFET

Abstract

This paper examines how changing dielectric material in gate stack JL-GAA-SiNWFET device affects the analog performance. A comprehensive analysis has been carried out using the ATLAS-3D TCAD device simulator at low drain bias voltage (0.1V) and niobium as a gate electrode having a work function of 4.8eV. The study focuses on the impact of SiO2, Al2O3, and HfO2 dielectric materials on the analog parameters of the proposed device. The device analog characteristics such as ID-VG, transconductance (GM), subthreshold swing, device efficiency, switching ratio, and leakage current have been examined. The results show that HfO2 performed best with 28.6%, 15.5%, and 48 times increase in respective transconductance, device efficiency, and switching ratio, and 6.4%, and 95.8% decrement in subthreshold swing and leakage current respectively than SiO2. This device uses interface oxide (SiO2) and dielectric oxide which is being varied, at the gate to prevent electron tunneling. These findings could be useful in the development of high-performance analog circuits for various applications, including sensor technologies and low-power electronics.