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dc.contributor.authorRIKHARI, MOHIT-
dc.date.accessioned2023-07-20T05:45:36Z-
dc.date.available2023-07-20T05:45:36Z-
dc.date.issued2023-05-
dc.identifier.urihttp://dspace.dtu.ac.in:8080/jspui/handle/repository/20129-
dc.description.abstractThe constant demand for power efficient electronic systems has led to the exploration of low-power design techniques in various aspects of integrated circuits. In particular, voltage level shifters play a crucial role in bridging voltage domains within a system. This thesis focuses on the design and optimization of energy-efficient voltage level shifters operating in the Near-Threshold Voltage (NTV) regime. This work presents a low power and high-speed voltage level shifter circuit which can convert near threshold voltages to super threshold region. The proposed structure improves performance and speed by implementing a low power buffer to minimize power losses in the previous designs. High delay owing to fall transition has been mitigated using a pass transistor, which improves the overall speed of operation of the circuit without using any multi-threshold devices. Only 11 transistors are used for the proposed circuit. The circuit can shift input voltages as low as 0.3 V to 1V output voltage. The proposed LS was implemented using 45nm CMOS technology and incurs power dissipation of 12.78nW with propagation delay of 4.106 ns for a 0.4V/ 1 MHz signal. The designed circuit shows high speed performance as compared to other circuits present in the literature over a wide range of temperature.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesTD-6687;-
dc.subjectSHIFTER DESIGNen_US
dc.subjectNTV REGIMEen_US
dc.subjectVOLTAGE LEVELen_US
dc.subjectCMOS TECHNOLOGYen_US
dc.titleENERGY EFFICIENT VOLTAGE LEVEL SHIFTER DESIGN IN NTV REGIMEen_US
dc.typeThesisen_US
Appears in Collections:M.E./M.Tech. Electrical Engineering

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