QUANTUM ATK ANALYSIS OF SILICON NANOWIRE FET WITH A CYLINDRICAL METALLIC WRAP-AROUND GATE VARIED WITH DIELECTRICS

Abstract

In this work, the application of dielectrics to the Silicon Nanowire Gate All Around Field Effect Transistor is discussed. Employing quantum ATK software, device is studied at three distinct dielectric constants (4,9,25). Sub-threshold circumstances such as subthreshold slope, ION and IOFF currents are explored at each dielectric. Calculated parameters and results were compared to three different dielectrics (4,9,25) with the same channel length. The ION /IOFF ratio for dielectric 4,9,25 was determined to be 0.86 x 10⁷, 0.22 x 10⁷, and 0.12 x10⁷ for the mentioned device, respectively. The subthreshold slopes were computed as 298.416 mV/dec, 285.8914 mV/dec, and 190.66 mV/dec for the same three dielectrics (4,9,25 respectively). Also, transmission spectrum was also calculated without dielectric explaining the transport of electrons at gate voltage, VG = 0.5V. Many further analyzes were carried out to see how the proposed device may be used for sensing applications.