EFFECT OF DIFFERENT PRECURSORS ON MORPHOLOGY OF CVD SYNTHESIZED MOSE2

Abstract

Transition metal dichalcogenides (TMD's) emerged as a very appealing candidate for useful implementations in optoelectronics and electronics devices. In two dimensional TMD's materials, MoSe2 have a direct bandgap (1.1eV) and possess suitable property for optoelectronics devices. Chemical Vapor Deposition (CVD) represents an attractive approach for the growth of MoSe2 monolayer and nanoflakes. MoSe2 is synthesized through CVD method and its structural properties are studied. The variation in morphology was also studied by changing growth temperature and precursor ratio. XRD turned into examine the crystal shape and morphology of a freshly produced MoSe2 sample and found that the synthesized MoSe2 nanoflakes crystalline size up to 4-5μm without any seeding promoter. We changed the growth temperature and flow rate keeping the pressure constant. As result, a slight change in the crystalline size of MoSe2 is observed. Further when NaCl is used as a seeding promoter and the pressure is reduced, the crystalline size was reduced and observed to be 0.476μm.