DESIGN AND STUDY OF NANOSCALE TRENCHED GATE MOSFET

Abstract

This Project presents T-CAD simulation of buffered trench gate MOSFET (BTG-MOSFET), and GaN buffered trench gate MOSFET (GaN-BTG MOSFET). The electrical attributes of the devices are contrasted with conventional trench gate MOSFET (CTG-MOSFET). A comparative study between various performance factors, for example, electric field, electron velocity, electron mobility, the threshold voltage (Vth), and sub-threshold swing (SS) of the devices has been performed. Results uncover a 43.85% improvement in SS and 9.83% decrement in Vth for GaN-BTG-MOSFET. Further in this report, GaN-BTG-MOSFET’s parameters are concentrated with variation in channel length, Effective Oxide thickness (tox), and Doping concentration. Thermal reliability of GaN- BTG-MOSFET for application in Integrated Circuits (ICs) at high temperatures (300K to 600 K) is examined. An intensive near examination of electrical characteristics GaN-BTG-MOSFET has been carried out. GaN-BTG MOSFET acts as a promising structure for further downsizing of the trenched gate MOSFET and guarantees better performance for sub-micrometer MOSFET.

Thermal reliability of GaN-BTG-MOSFET for application in Integrated Circuits (ICs) at high temperatures (300K to 600K). An intensive relative investigation of electrical characteristics, for example, transconductance, transfer characteristics, leakage current, and the electric field of the designed devices have been performed using the TCAD Atlas tool. A detailed discussion is introduced on the thermal stability of the device at high temperatures

(300-600K). Report additionally presents the performance factors, for example, On- Resistance (Ron), leakage current, and threshold voltage (Vth). Results recommend that the

introduction of GaN instead of silicon in a trenched gate structure not just improves the device’s performance at room temperature (300K) yet additionally enhances the thermal stability of the device. The performance of GaN-BTG-MOSFET at high temperatures when contrasted with CTG MOSFET suggests that it tends to be utilized in ICs and shows preferred thermal stability than silicon-based devices.