INVESTIGATION OF THE PLASMA CHARACTERISTICS BY VARYING THE PRESSURE AND GAS TEMPERATURE INSIDE THE PECVD CHAMBER.

Abstract

The following report demonstrates the renowned technique of growing carbon nanostructures, which is plasma enhanced chemical vapour deposition. There exist many techniques like thermal-chemical vapour deposition, physical vapour deposition, laser ablation, sol-gel, sputtering, ball-milling, etc for the growth and manufacture of carbon nanostructures. Chemical vapour deposition or CVD in short, is a strategy for the creation of thin layers of polymeric materials that has viably beaten a portion of the issues went up against by wet synthetic fabrication and other affidavit strategies. There are numerous hybrid techniques that emerge from chemical vapor deposition and are consistently developing so as to enhance and alter the nature of the manufactured thin films. Among them, plasma enhanced substance vapor deposition or to put it plainly, PECVD, is a strategy that can broaden the relevance of the system for different predecessors, responsive natural and inorganic materials and additionally non-receptive or dormant materials. Moreover, by this method, one can grow carbon nanoparticles, nano-films, nano-rods and nanowires with great ease. Using COMSOL Multi-physics simulation software, we have simulated the production of plasma in a chamber that was excited with signal of RF frequency of 13.56 MHz using inductive coupling. The gases used are argon, acetylene and hydrogen. The analysis of various characteristics of plasma were done at different pressures and temperatures. PECVD, like all other method, still undergoes few restrictions like choice of suitable inlet tool or rather the production of toxic gases inside the plasma chamber. However, the notable characteristics of this method and diversity of possible applications make it a state of interest for researcher team, and gives potential for many future progresses.