NUMERICAL SIMULATION OF PCBM AND MoO3 STACED ELECTRON AND HOLE TRANSPORT LAYER BASED PEROVSKITE SOLAR CELL

Abstract

In this study, a perovskite based solar cell device has been proposed and the power conversion efficiency, fill factor, open circuit voltage and short circuit current density of the proposed device was analyzed. When simulated, it achieves a power conversion efficiency of over 14% with AM 1.5 illumination. This type of perovskite solar cell has shown potential towards achieving a low cost and efficient solar energy conversion method and unlike its silicon counterparts, it has none of the disadvantages that are present in silicon based solar cells. Different materials and their combinations were used as electron transport layer and hole transport layer. Materials that were used as electron transport layer resulted in short circuit current density of 17.92 mA.cm-2. When a combination of two materials were used as hole transport layer, it has been observed that the external quantum efficiency is close to 55% in the 350-450 nm range which corresponds to high power conversion efficiency of 14.27% but the open circuit voltage showed little variation around 1.02 volts . When MoO3 is used as a hole transport layer and its thickness and doping was optimized, it was observed that there is a 60% increase in the short circuit current density as the thickness of MoO3 was decreased and a 2% decrease in the PCE and FF with increase in thickness. When the doping of MoO3 is varied, the external quantum efficiency went down from 55% to 50%. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behavior of the device.