A STUDY ON PERFORMANCE IMPROVEMENTS BY USING SiC (SILICON CARBIDE) BASED MOSFET COMPARED TO Si-IGBT IN STATIC INVERTER OF METRO TRAIN

Abstract

In Modern power electronics system, now improvement in system efficiency, lesser weight of components, higher switching frequency and lesser losses are area of research. As far as power electronics devices are concern, almost all conventional silicon based devices like IGBT, MOSFET, GTO has reached at their maximum theoretical limit. So now a new material which is SiC (silicon carbide based) is currently topic of discussion. SiC based power electronics devices has many advantages like lower On state loss, lower switching losses, higher switching frequency, higher breakdown voltage, better thermal stability, less weight with same power rating. In this project work, effiency improvement by using SiC based MOSFET has been compared with Si based IGBT used for metro train Static inverter. MATLAB simulation also done for above study. 50%, 75% & 100% loading condition of static inverter was considered for above study. As per MATLAB simulation it is concluded that efficiency of system improved in the range of 3-4% at each 50%, 75% & 100% loading condition.