STUDY OF DUAL MATERIAL GATE-DOUBLE GATE TUNNEL FET

Abstract

The motivation of this work depends upon two major drawbacks of conventional MOSFET. One of them is small sub threshold swing and the other major drawback is power consumption. As we are moving towards Nano scale devices, it is mandatory for us to handle these major problems, so we introduced a new FET device with band to band tunneling phenomenon. The history of tunnel FET is shown in the introduction.