RAY TRACE FOCUSING BY ELLIPTICAL LENSLET IN TRANSPARENT GATE RECESSED CHANNEL MOSFET

Abstract

With advance CMOS technology, there is a leap to another milestone in nanometer regime. As CMOS technology dimensions are being aggressively scaled to reach a limit where device performance must be assessed against fundamental limits, nanoscale device modelling is needed to provide innovative new MOS devices as well as to understand the limits of the scaling process. The conventional MOFET seems to be of little use in continuing scaling of gate length, gate oxides and threshold voltages to controlled leakage current. Aggressive scaling is associated number of high order effects such as short channel effects, hot carrier effects and heating effect which significantly affect the device performance. The Ray trace method in MOSFET emerged to be the ultimate solution. To further improve the sub threshold electrical parameters, a transparent gate may be inserted as the gate material, thereby extending the idea of a transparent indium tin oxide (ITO) gate onto the Recessed Channel MOSFET (RC-MOSFET). The proposed device has an elliptical lenslet above the RC MOSFET to focus the ray trace in to the transparent ITO gate. The effect of illumination with improved photogeneration rate, optical intensity, switching ratio and light absorption is studied. Recessed channel reduce the impact of drain potential over the channel and also improves the gate control because of its negative junctions without any increase in series resistance. Results clearly reflect that transparent gate RC MOSFET has an enhanced absorption within the semiconductor device. The work proves the effectiveness of transparent gate RC-MOSFET for higher efficiency, speed, photogeneration, reduction in power dissipation and better temperature stability. Possible applications can be found in the optically coupled signal transmission in the lower frequency range.The simulation results indicate potential of the proposed MOSFET as optically sensitive structure which can be used for increase in data transmission/reception rates and reduction in power consumption. Luminous-3D RC-MOSFET is fully integrated with ATLAS and the Device 3D which is the part of Silvaco TCAD omni bundle.