DESIGN OF LOW POWER HIGH GAIN LNA USING MICROSTRIP LINES FOR WIRELESS APPLICATIONS

Abstract

With the rapid development of the communication industry, more and more kinds of wireless communication apparatus are needed, such as small a low noise figure, low input/output return losses, a high IIP3, low power have been the main target of the businessman and the manufacturer of the wireless communication. In this condition, swift developmental radio frequency (RF) wireless communication technology has been widely used in all fields of the world. Low noise amplifier (LNA) which is in the RF front-end circuit has the great value in this field. LNAs are a crucial element of RF receivers. Their role is to amplify the RF signal to a level that meets the sensitivity requirements of the other components (e.g. Filter). In order to achieve the required gain it is essential to make sure that the reflection coefficients S11 and S22 are minimized. In addition, LNAs are usually the bottleneck in terms of Noise Figure and distortion. Advanced Design System (ADS) tool was used for design and simulation, and each design was tuned to get the optimum value for noise figure, gain and input reflection coefficient. LNA standalone gives acceptable value of noise figure and gain but the bandwidth was too narrow compared to specification. The gain was almost flat over the whole band, i.e., 2.4-2.5 GHz compared to Low- Noise Amplifier designed In this project report work, a new approach of design and performance analysis of A Low Power High Gain LNA for Wireless Applications is performed at 2.45 GHz. Performances of different designs are compared with respect to noise figure, gain, input and output reflection coefficient. In this design process, a single stage LNA using C-S LNA with a simple C-S stage added to the ‘cascode’ is design with CMOS Technology. After the simulation we got the simulated result of low noise amplifier as forward voltage gain (S21) of 26.486 dB, noise figure is 1.268 dB, input reflection coefficient (S11) is -5.841 dB, output reflection coefficient (S22) is -52.533 dB and S12 is - 18.823 dB. Power consumed by the design is 4.49 m W with supply voltage 1.2 V. LNA designed using HEMT (using microstrip lines) at 2.4 GHz operating frequency, simulated by ADS designed by Agilent Technologies. After the simulation it has achieved the gain 13.33 dB, noise figure 0.667dB, minimum noise figure 0.518 dB, input reflection coefficient -17.06 dB, output reflection coefficient -13.02 dB, reverse isolation coefficient -23.32 dB, stability is greater than 1 with supply voltage 5 V using microstrip lines.