Please use this identifier to cite or link to this item:
http://dspace.dtu.ac.in:8080/jspui/handle/repository/15234
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | SINGH, AMAN PAL | - |
dc.date.accessioned | 2016-10-20T05:10:39Z | - |
dc.date.available | 2016-10-20T05:10:39Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.uri | http://dspace.dtu.ac.in:8080/jspui/handle/repository/15234 | - |
dc.description.abstract | Radiation has significant impact on the device materials. Devices go through different radiation environments when they are in operation. Radiation has its presence in space, high energy experiments, and nuclear power plants or in fabrication industry. The device material should be robust and must have high susceptibility to function flawlessly in different radiation conditions. In this study the interaction of ions into metalloids is being simulated using SRIM (Stopping and range of ions in matter) simulation. By using this simulation, the final distribution of ions in metalloids and kinetic phenomena related to energy loss of ions are calculated. Kinetic phenomenon includes target damage, ionization and phonons production. From the findings, it is observed that the interaction of ions with the metalloids produces lattice defects in the form of vacancies, displacement and interstitials. The simulation results also show that the damage in metalloids is depending on the electronic stopping, nuclear stopping and projected range of ions. | en_US |
dc.language.iso | en_US | en_US |
dc.relation.ispartofseries | TD NO.2496; | - |
dc.subject | METALLOIDS | en_US |
dc.subject | IONS’ IMPACT | en_US |
dc.subject | RADIATION | en_US |
dc.subject | SRIM | en_US |
dc.title | STUDY OF IONS’ IMPACT ON METALLOIDS | en_US |
dc.type | Thesis | en_US |
Appears in Collections: | M.E./M.Tech. Applied Physics |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
project full and final.pdf | 5.08 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.