EFFECT OF PLASMA PARAMETERS ON THE GROWTH AND FIELD EMISSION PROPERTY OF HEMISPHERICAL CNT TIP

Abstract

This work present a theoretical model to study the growth of carbon nanotube with hemispherical tip on the catalyst substrate surface in the presence of reactive plasma. The equation of charging of CNT, balance equation of ions, neutrals and electrons number density, growth equation of CNT and energy balance equation of CNT for hemispherical tip has been derived. The numerical calculation of growth of CNT has been carried out. From the result we get the effect of ion number density, substrate temperature, ion temperature and substrate potential on the height and radius of CNT. It is found that the height of CNT increases as ion density increases whereas radius of CNT decreases with increase in hydrogen ion density. Substrate temperature also has the effect on growth of CNT. The field emission properties has been analyzed from result obtained.