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Please use this identifier to cite or link to this item: http://dspace.dtu.ac.in:8080/jspui/handle/repository/14871
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dc.contributor.authorKAKOTY, NIMISHA-
dc.date.accessioned2016-06-06T05:58:12Z-
dc.date.available2016-06-06T05:58:12Z-
dc.date.issued2016-06-
dc.identifier.urihttp://dspace.dtu.ac.in:8080/jspui/handle/repository/14871-
dc.description.abstractThe search for monolayer materials to substitute silicon in electronic devices has widened in the past decade. Despite the benefits of two dimensional graphene, it has no band gap and behaves as a semi-metal. Molybdenum disulphide is a promising material as it boasts a band gap of up to 1.9eV in a monolayer form. In this project, an inexpensive method of fabricating monolayer MoS2 is designed and growths on Si-substrates for future use in electronic devices will be attempted with this fabrication methoden_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesTD NO.1944;-
dc.subjectMOLYBDENUM DISULFIDE NANOSHEETSen_US
dc.subjectCHARACTERIZATIONen_US
dc.subjectFABRICATING MONOLAYERen_US
dc.subjectSILICONen_US
dc.titleSYNTHESIS AND STRUCTURAL CHARACTERIZATION OF MOLYBDENUM DISULFIDE NANOSHEETen_US
dc.typeThesisen_US
Appears in Collections:M.E./M.Tech. Applied Physics

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FIGURE-ABS.pdf177.39 kBAdobe PDFView/Open
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