2D SIMULATION OF ELECTRONIC TRANSPORT IN InP MESFET USING ENSEMBLE MONTE CARLO METHOD

Abstract

InP MESFET find applications in high-power microwave devices because of its high saturation velocity and breakdown voltage. I have performed a two-dimensional simulation on an InP metal-semiconductor field effect transistor (MESFET) using Ensemble Monte Carlo. In this thesis electronic transport of InP MESFET has been observed. InP MESFET devices have low noise, higher gain and higher frequency performance as compared to GaAs devices. The Monte Carlo method is the best method to obtain the solution of the Boltzmann Transport Equation (BTE) . The bulk Monte Carlo approach is suitable for the characterization of materials, so in order to study behavior of devices, Monte Carlo is coupled with the poissons equation. Archimedes has been used for the purpose of simulation in which the device description is given in script format.