2D SIMULATION OF ELECTRONIC TRANSPORT IN GaAs MESFET BY ENSEMBLE MONTE CARLO METHOD

Abstract

ABSTRACT I have performed the simulation of the electronic transport of GaAs MESFET by ensemble Monte Carlo method using Archimedes package and GUI plot in 2-D space. MESFETs are usually constructed in compound semiconductor technologies lacking high quality surface passivation such as GaAs, InP, or SiC, and are faster but more expensive than silicon-based JFETs or MOSFETs. Production MESFETs are operated up to approximately 45 GHz and are commonly used for microwave frequency communications and radar. They are quite similar to a JFET in construction and terminology. The difference is that instead of using a p-n junction for a gate, a Schottky (metal-semiconductor) junction is used. The Ensemble Monte Carlo method is the method that Archimedes uses to simulate and predict the behavior of a devices. Being the Monte Carlo very stable and reliable, Archimedes can be used to know the characteristics of a device even before this is built. The physics and geometry of a device is described simply by a script, which makes, in this sense, Archimedes a powerful tool for the simulation of quite general semiconductor devices.