SIMULATION AND ANALYSIS OF CONTACT LENGTH VARIATION IN TOP CONTACT AND BOTTOM CONTACT ORGANIC FIELD EFFECT TRANSISTOR

Abstract

Research into organic eld e ect transistors (OFETs) has made signi cant advances both scienti - cally and technologically during the last decade, and the rst products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alterna- tives to silicon-based systems, especially in large-area applications. In OFET organic semiconductor used in the simulation is pentacene which is a p-type semicon- ductor. It works in the accumulation mode. When gate voltage and drain voltage is applied. This simulation is done with ATLAS. ATLAS is simulation software. In this thesis work variation in the contact length is observed. How small contact can be obtained. Contact material used in OFET source and drain is Au (Gold). We can reduce the cost by using less amount of Au. If contact length is reduced the cost is reduced. By reducing the contact length we can reduce the geometry of the device. This can be used in the nano organic device.